IRF610 MOSFET
Specifications of IRF610 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1.5 mΩ
- Continuous Drain Current: 3.3 A
- Total Gate Charge: 8.2 nC
- Power Dissipation: 36 W
- Package: TO-220AB
Pinout of IRF610
Complementary
The complementary
p-channel transistor to the IRF610 is the
IRF9610.
Replacement and Equivalent of IRF610 Transistor
You can replace the IRF610 with the
IRF610PBF,
IRF620,
IRF620PBF,
IRF624,
IRF630,
IRF630PBF,
IRF634,
IRF640,
IRF640PBF,
IRF644,
IRF730,
IRF730A,
IRF730B,
IRF740,
IRF740A,
IRF740B,
IRF740LC,
IRF830,
IRF830A,
IRF830B,
IRF840,
IRF840A,
IRF840LC,
IRFB13N50A,
IRFB17N50L,
IRFB9N60A,
IRFB9N65A,
IRFBC40,
IRFBC40A,
IRFBC40LC
