STD01P Bipolar Transistor

Characteristics of STD01P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 5000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P-5WO2

Pinout of STD01P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STD01P transistor can have a current gain of 5000 to 20000. The gain of the STD01P-O will be in the range from 5000 to 12000, for the STD01P-Y it will be in the range from 8000 to 20000.

Equivalent circuit

STD01P equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the STD01P is the STD01N.

Replacement and Equivalent for STD01P transistor

You can replace the STD01P with the STD02P or STD03P.
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