S8050D Bipolar Transistor

Characteristics of S8050D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 160 to 300
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of S8050D

The S8050D is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The S8050D transistor can have a current gain of 160 to 300. The gain of the S8050 will be in the range from 85 to 300, for the S8050B it will be in the range from 85 to 160, for the S8050C it will be in the range from 120 to 200.

Complementary PNP transistor

The complementary PNP transistor to the S8050D is the S8550D.

Replacement and Equivalent for S8050D transistor

You can replace the S8050D with the 2N4401, 2N5172, 2SD471A, KN2222, KN2222A, KSD471A, KSP2222A, KTC8050, KTC8050D, KTN2222, KTN2222A, M8050, M8050-D, MPS2222, MPS2222A, MPS2222AG, MPS2222G, MPS3704, MPS650, MPS650G, MPS6532, MPS6601, MPS6601G, MPS6602, MPS6602G, MPS8050, MPS8050D, MPSW01, MPSW01A, MPSW01AG, MPSW01G, NTE123AP, P2N2222A, P2N2222AG, PN100, PN2219, PN2219A, PN2222, PN2222A, PN3569, S9013, SS8050, SS8050D, ZTX449, ZTX450 or ZTX690B.
If you find an error please send an email to mail@el-component.com