SS8050 Bipolar Transistor

Characteristics of SS8050 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 85 to 300
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of SS8050

The SS8050 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The SS8050 transistor can have a current gain of 85 to 300. The gain of the SS8050B will be in the range from 85 to 160, for the SS8050C it will be in the range from 120 to 200, for the SS8050D it will be in the range from 160 to 300.

Complementary PNP transistor

The complementary PNP transistor to the SS8050 is the SS8550.

SMD Version of SS8050 transistor

The MPS8050S (SOT-23) is the SMD version of the SS8050 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for SS8050 transistor

You can replace the SS8050 with the MPS650, MPS650G or MPS8050.
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