SS8050D Bipolar Transistor

Characteristics of SS8050D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 160 to 300
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of SS8050D

The SS8050D is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The SS8050D transistor can have a current gain of 160 to 300. The gain of the SS8050 will be in the range from 85 to 300, for the SS8050B it will be in the range from 85 to 160, for the SS8050C it will be in the range from 120 to 200.

Complementary PNP transistor

The complementary PNP transistor to the SS8050D is the SS8550D.

SMD Version of SS8050D transistor

The FMMT449 (SOT-23), MPS8050S (SOT-23) and MPS8050S-D (SOT-23) is the SMD version of the SS8050D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for SS8050D transistor

You can replace the SS8050D with the MPS650, MPS650G, MPS8050, MPS8050D or ZTX690B.
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