S8050B Bipolar Transistor

Characteristics of S8050B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 85 to 160
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of S8050B

The S8050B is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The S8050B transistor can have a current gain of 85 to 160. The gain of the S8050 will be in the range from 85 to 300, for the S8050C it will be in the range from 120 to 200, for the S8050D it will be in the range from 160 to 300.

Complementary PNP transistor

The complementary PNP transistor to the S8050B is the S8550B.

Replacement and Equivalent for S8050B transistor

You can replace the S8050B with the 2SD471A, KTC9013, MPS3414, MPS3416, MPS650, MPS650G, MPS6532, MPS6560, MPS6560G, MPS6601, MPS6601G, MPS6602, MPS6602G, MPS8050, MPS8050B, MPSW01, MPSW01A, MPSW01AG, MPSW01G, S9013, SS8050 or SS8050B.
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