M8050-D Bipolar Transistor

Characteristics of M8050-D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 160 to 300
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of M8050-D

The M8050-D is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The M8050-D transistor can have a current gain of 160 to 300. The gain of the M8050 will be in the range from 120 to 300, for the M8050-C it will be in the range from 120 to 200.

Complementary PNP transistor

The complementary PNP transistor to the M8050-D is the M8550-D.

SMD Version of M8050-D transistor

The FMMT449 (SOT-23) is the SMD version of the M8050-D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for M8050-D transistor

You can replace the M8050-D with the 2SD471A, KSD471A, MPS650, MPS650G, MPS6601, MPS6601G, MPS6602, MPS6602G, MPS8050, MPS8050D, MPSW01, MPSW01A, MPSW01AG, MPSW01G, PN2222A, SS8050, SS8050D, ZTX449, ZTX450 or ZTX690B.
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