NTE375 Bipolar Transistor
Characteristics of NTE375 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 200 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 2 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 100 to 200
- Transition Frequency, min: 8 MHz
- Operating and Storage Junction Temperature Range: -40 to +150 °C
- Package: TO-220
Pinout of NTE375
Complementary PNP transistor
Replacement and Equivalent for NTE375 transistor
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