MJL21196G Bipolar Transistor

Characteristics of MJL21196G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 25 to 75
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-264
  • Electrically Similar to the Popular MJ21196G transistor
  • The MJL21196G is the lead-free version of the MJL21196 transistor

Pinout of MJL21196G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJL21196G is the MJL21195.

Replacement and Equivalent for MJL21196G transistor

You can replace the MJL21196G with the 2SD1313, MJL21194, MJL21194G, MJL21196, MJW21194, MJW21194G, MJW21196, MJW21196G, NJW21194 or NJW21194G.
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