2SD1313 Bipolar Transistor
Characteristics of 2SD1313 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 800 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 25 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 15
- Transition Frequency, min: 6 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of 2SD1313
Marking
Replacement and Equivalent for 2SD1313 transistor
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