MJW21196 Bipolar Transistor

Characteristics of MJW21196 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 20 to 80
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247
  • Electrically Similar to the Popular MJ21196 transistor

Pinout of MJW21196

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJW21196 transistor

You can replace the MJW21196 with the 2SD1313, MJW21194, MJW21194G, MJW21196G, NJW21194 or NJW21194G.

Lead-free Version

The MJW21196G transistor is the lead-free version of the MJW21196.
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