MJW21196 Bipolar Transistor
Characteristics of MJW21196 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 250 V
- Collector-Base Voltage, max: 400 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 16 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 20 to 80
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-247
- Electrically Similar to the Popular MJ21196 transistor
Pinout of MJW21196
Replacement and Equivalent for MJW21196 transistor
Lead-free Version
If you find an error please send an email to mail@el-component.com