MJ21196G Bipolar Transistor

Characteristics of MJ21196G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 250 W
  • DC Current Gain (hfe): 25 to 75
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ21196G is the lead-free version of the MJ21196 transistor

Pinout of MJ21196G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ21196G is the MJ21195.

Replacement and Equivalent for MJ21196G transistor

You can replace the MJ21196G with the MJ21194, MJ21194G or MJ21196.
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