MJW21196G Bipolar Transistor

Characteristics of MJW21196G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 20 to 80
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247
  • Electrically Similar to the Popular MJ21196G transistor
  • The MJW21196G is the lead-free version of the MJW21196 transistor

Pinout of MJW21196G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJW21196G is the MJW21195.

Replacement and Equivalent for MJW21196G transistor

You can replace the MJW21196G with the 2SD1313, MJW21194, MJW21194G, MJW21196, NJW21194 or NJW21194G.
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