MJD117G Bipolar Transistor

Characteristics of MJD117G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 1000 to 12000
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular TIP117 transistor
  • The MJD117G is the lead-free version of the MJD117 transistor

Pinout of MJD117G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD117G transistor is marked as "J117G".

Complementary NPN transistor

The complementary NPN transistor to the MJD117G is the MJD112G.

Replacement and Equivalent for MJD117G transistor

You can replace the MJD117G with the MJD117, MJD117T4, MJD117T4G, MJD127, MJD127G, MJD127T4 or MJD127T4G.
If you find an error please send an email to mail@el-component.com