MJD127G Bipolar Transistor

Characteristics of MJD127G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 1000 to 12000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular TIP127 transistor
  • The MJD127G is the lead-free version of the MJD127 transistor

Pinout of MJD127G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD127G transistor is marked as "J127G".

Complementary NPN transistor

The complementary NPN transistor to the MJD127G is the MJD122G.

Replacement and Equivalent for MJD127G transistor

You can replace the MJD127G with the MJD127, MJD127T4 or MJD127T4G.
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