MJD117T4G Bipolar Transistor

Characteristics of MJD117T4G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 1000 to 12000
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular TIP117 transistor
  • The MJD117T4G is the lead-free version of the MJD117T4 transistor

Pinout of MJD117T4G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD117T4G transistor is marked as "J117G".

Replacement and Equivalent for MJD117T4G transistor

You can replace the MJD117T4G with the MJD117, MJD117G, MJD117T4, MJD127, MJD127G, MJD127T4 or MJD127T4G.
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