MJD117T4G Bipolar Transistor
Characteristics of MJD117T4G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 1000 to 12000
- Transition Frequency, min: 25 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-252
- Electrically Similar to the Popular TIP117 transistor
- The MJD117T4G is the lead-free version of the MJD117T4 transistor
Pinout of MJD117T4G
Marking
Replacement and Equivalent for MJD117T4G transistor
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