MJD112G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 100 V
• Collector-Base Voltage, max: 100 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 2 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 1000 to 12000
• Transition Frequency, min: 25 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-252
• Electrically Similar to the Popular TIP112 transistor
• The MJD112G is the lead-free version of the MJD112 transistor

Here is an image showing the pin diagram of this transistor.The MJD112G transistor is marked as "J112G".The complementary PNP transistor to the MJD112G is the MJD117G.The FMMT624 (SOT-23) and FZT694B (SOT-223) is the SMD version of the MJD112G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the MJD112G with the MJD112, MJD112T4, MJD112T4G, MJD122, MJD122G, MJD122T4 or MJD122T4G.