MJD127T4G Bipolar Transistor

Characteristics of MJD127T4G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 1000 to 12000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular TIP127 transistor
  • The MJD127T4G is the lead-free version of the MJD127T4 transistor

Pinout of MJD127T4G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD127T4G transistor is marked as "J127G".

Replacement and Equivalent for MJD127T4G transistor

You can replace the MJD127T4G with the MJD127, MJD127G or MJD127T4.
If you find an error please send an email to mail@el-component.com