MJ12003 Bipolar Transistor

Characteristics of MJ12003 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 750 V
  • Collector-Base Voltage, max: 1500 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 6
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of MJ12003

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJ12003 transistor

You can replace the MJ12003 with the MJ12004, MJ12005, MJ8503 or MJ8505.
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