MJ11021G Bipolar Transistor

Characteristics of MJ11021G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -250 V
  • Collector-Base Voltage, max: -250 V
  • Emitter-Base Voltage, max: -50 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 400 to 15000
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11021G is the lead-free version of the MJ11021 transistor

Pinout of MJ11021G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ11021G is the MJ11022G.

Replacement and Equivalent for MJ11021G transistor

You can replace the MJ11021G with the MJ11021.
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