MJE181G Bipolar Transistor

Characteristics of MJE181G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 50 to 250
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE181G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE181G transistor

You can replace the MJE181G with the BD177, BD179, BD189, BD787, BD787G, BD789, BD791, BDX35, BDX36, BDX37, KSE181, KSE182, MJE181, MJE182, MJE182G, MJE225, MJE242 or MJE244.
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