KTD1691-O Bipolar Transistor
Characteristics of KTD1691-O Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 160 to 320
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SD1691-L transistor
Pinout of KTD1691-O
Classification of hFE
SMD Version of KTD1691-O transistor
Replacement and Equivalent for KTD1691-O transistor
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