KTD1691-O Bipolar Transistor

Characteristics of KTD1691-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 160 to 320
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD1691-L transistor

Pinout of KTD1691-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD1691-O transistor can have a current gain of 160 to 320. The gain of the KTD1691 will be in the range from 160 to 400, for the KTD1691-Y it will be in the range from 200 to 400.

SMD Version of KTD1691-O transistor

The BDP949 (SOT-223) is the SMD version of the KTD1691-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTD1691-O transistor

You can replace the KTD1691-O with the 2SD1691, 2SD1691-L, KSD1691 or KSD1691-Y.
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