KTC2020D-GR Bipolar Transistor
Characteristics of KTC2020D-GR Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 3 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 150 to 300
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-252
Pinout of KTC2020D-GR
Classification of hFE
SMD Version of KTC2020D-GR transistor
Replacement and Equivalent for KTC2020D-GR transistor
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