2SD1221-GR Bipolar Transistor

Characteristics of 2SD1221-GR Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1221-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1221-GR transistor can have a current gain of 150 to 300. The gain of the 2SD1221 will be in the range from 60 to 300, for the 2SD1221-O it will be in the range from 60 to 120, for the 2SD1221-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1221-GR might only be marked "D1221-GR".

SMD Version of 2SD1221-GR transistor

The BDP949 (SOT-223) and FZT692B (SOT-223) is the SMD version of the 2SD1221-GR transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1221-GR transistor

You can replace the 2SD1221-GR with the KTC2020D or KTC2020D-GR.
If you find an error please send an email to mail@el-component.com