KTA1040D Bipolar Transistor

Characteristics of KTA1040D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of KTA1040D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTA1040D transistor can have a current gain of 100 to 300. The gain of the KTA1040D-GR will be in the range from 150 to 300, for the KTA1040D-Y it will be in the range from 100 to 200.

SMD Version of KTA1040D transistor

The BDP950 (SOT-223) is the SMD version of the KTA1040D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTA1040D transistor

You can replace the KTA1040D with the KTA1046.
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