KTB817B-O Bipolar Transistor

Characteristics of KTB817B-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P
  • Electrically Similar to the Popular 2SB817-D transistor

Pinout of KTB817B-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB817B-O transistor can have a current gain of 60 to 120. The gain of the KTB817B will be in the range from 60 to 200, for the KTB817B-Y it will be in the range from 100 to 200.

Replacement and Equivalent for KTB817B-O transistor

You can replace the KTB817B-O with the 2SA1294, 2SA1301, 2SA1302, 2SA1303, 2SA1386, 2SA1386A, 2SA1386A-O, 2SA1386A-P, 2SA1386A-Y, 2SA1492, 2SA1516, 2SA1942, 2SA1943, 2SA1962, 2SA1986, 2SA2063, 2SA2120, 2SA2121, 2SA2151, 2SA2151A, 2SA2151A-O, 2SA2151A-P, 2SA2151A-Y, 2SA2223, 2SA2223A, 2SB1162, 2SB1162-Q, 2SB1163, 2SB1163-Q, 2SB1429, 2SB817, 2SB817-D, FJA4213, FJL4215, KTA1943, KTA1943A, KTA1962, KTA1962A, KTB817, KTB817-O, MAG9413, MJW1302A, MJW1302AG or NTE2329.
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