2SB1163-Q Bipolar Transistor

Characteristics of 2SB1163-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1163-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1163-Q transistor can have a current gain of 60 to 120. The gain of the 2SB1163 will be in the range from 60 to 200, for the 2SB1163-P it will be in the range from 100 to 200, for the 2SB1163-S it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1163-Q might only be marked "B1163-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1163-Q is the 2SD1718-Q.

Replacement and Equivalent for 2SB1163-Q transistor

You can replace the 2SB1163-Q with the 2SA1294, 2SA1302, 2SA1386A, 2SA1386A-O, 2SA1386A-P, 2SA1386A-Y, 2SA1492, 2SA1943, 2SA1962, 2SA1986, 2SA2121, 2SA2151, 2SA2151A, 2SA2151A-O, 2SA2151A-P, 2SA2151A-Y, 2SA2223, 2SA2223A, 2SB1429, FJA4213, FJL4215, KTA1943, KTA1943A, KTA1962, KTA1962A, MAG9413, MJW1302A, MJW1302AG or NTE2329.
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