2SA2151A-P Bipolar Transistor

Characteristics of 2SA2151A-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -230 V
  • Collector-Base Voltage, max: -230 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 160 W
  • DC Current Gain (hfe): 50 to 180
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SA2151A-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA2151A-P transistor can have a current gain of 50 to 180. The gain of the 2SA2151A will be in the range from 50 to 180, for the 2SA2151A-O it will be in the range from 50 to 180, for the 2SA2151A-Y it will be in the range from 50 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA2151A-P might only be marked "A2151A-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SA2151A-P is the 2SC6011A-P.

Replacement and Equivalent for 2SA2151A-P transistor

You can replace the 2SA2151A-P with the MJW1302A or MJW1302AG.
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