KTD998 Bipolar Transistor

Characteristics of KTD998 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 55 to 160
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P
  • Electrically Similar to the Popular 2SD998 transistor

Pinout of KTD998

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD998 transistor can have a current gain of 55 to 160. The gain of the KTD998-O will be in the range from 80 to 160, for the KTD998-R it will be in the range from 55 to 110.

Complementary PNP transistor

The complementary PNP transistor to the KTD998 is the KTB778.

Replacement and Equivalent for KTD998 transistor

You can replace the KTD998 with the 2SC2581, 2SC2706, 2SC2837, 2SC3182, 2SC3182-O, 2SC3280, 2SC3281, 2SC3284, 2SC3519, 2SC3519A, 2SC3519A-O, 2SC3519A-P, 2SC3519A-Y, 2SC3855, 2SC3907, 2SC4468, 2SC5198, 2SC5199, 2SC5200, 2SC5200N, 2SC5358, 2SC5948, 2SC5949, 2SC6011, 2SC6011A, 2SC6011A-O, 2SC6011A-P, 2SC6011A-Y, 2SD1148, 2SD2155, 2SD998, FJA4310, KTC5200, KTC5200A, KTC5242, KTC5242A, KTD718, KTD718B, MJW3281A, MJW3281AG or NTE2328.
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