KTB1151-O Bipolar Transistor

Characteristics of KTB1151-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 160 to 320
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB1151-L transistor

Pinout of KTB1151-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB1151-O transistor can have a current gain of 160 to 320. The gain of the KTB1151 will be in the range from 160 to 400, for the KTB1151-Y it will be in the range from 200 to 400.

Complementary NPN transistor

The complementary NPN transistor to the KTB1151-O is the KTD1691-O.

SMD Version of KTB1151-O transistor

The 2STF2360 (SOT-89), 2STN2360 (SOT-223), BDP950 (SOT-223) and STN951 (SOT-223) is the SMD version of the KTB1151-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTB1151-O transistor

You can replace the KTB1151-O with the 2SB1151, 2SB1151-L, KSB1151 or KSB1151-Y.
If you find an error please send an email to mail@el-component.com