KTB1151-O Bipolar Transistor
Characteristics of KTB1151-O Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 160 to 320
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SB1151-L transistor
Pinout of KTB1151-O
Classification of hFE
Complementary NPN transistor
SMD Version of KTB1151-O transistor
Replacement and Equivalent for KTB1151-O transistor
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