2SB1151-M Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -60 V
• Collector-Base Voltage, max: -60 V
• Emitter-Base Voltage, max: -7 V
• Collector Current − Continuous, max: -5 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 100 to 200
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The 2SB1151-M transistor can have a current gain of 100 to 200. The gain of the 2SB1151 will be in the range from 100 to 400, for the 2SB1151-K it will be in the range from 200 to 400, for the 2SB1151-L it will be in the range from 160 to 320.Sometimes the "2S" prefix is not marked on the package - the 2SB1151-M might only be marked "B1151-M".The complementary NPN transistor to the 2SB1151-M is the 2SD1691-M.The BDP950 (SOT-223) is the SMD version of the 2SB1151-M transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2SB1151-M with the KSB1151 or KSB1151-O.