KSA812-G Bipolar Transistor

Characteristics of KSA812-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 180 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23
  • Electrically Similar to the Popular 2SA812-M6 transistor

Pinout of KSA812-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSA812-G transistor can have a current gain of 200 to 400. The gain of the KSA812 will be in the range from 90 to 600, for the KSA812-L it will be in the range from 300 to 600, for the KSA812-O it will be in the range from 90 to 180, for the KSA812-Y it will be in the range from 135 to 270.

Marking

The KSA812-G transistor is marked as "D1G".

Complementary NPN transistor

The complementary NPN transistor to the KSA812-G is the KSC1623-G.

Replacement and Equivalent for KSA812-G transistor

You can replace the KSA812-G with the 2SA1037, 2SA1162, 2SA1162-GR, 2SA1366, 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SA1832, 2SA1832-GR, 2SA812, 2SA812-M6, 2STR2160, BC856, BC856B, FMMTA55, FMMTA56, KST55, KST56, KTA1504, KTA1504GL, KTA1504S, KTA1504S-GL, MMBT4354, MMBT4355, MMBTA55, MMBTA56, PMBTA56, SMBTA55 or SMBTA56.
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