FJP13009H1 Bipolar Transistor

Characteristics of FJP13009H1 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 8 to 17
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of FJP13009H1

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJP13009H1 transistor can have a current gain of 8 to 17. The gain of the FJP13009 will be in the range from 8 to 40, for the FJP13009H2 it will be in the range from 15 to 28.

Marking

The FJP13009H1 transistor is marked as "J13009-1".

Replacement and Equivalent for FJP13009H1 transistor

You can replace the FJP13009H1 with the KSE13009, KSE13009H1, MJE13009 or MJE13009G.
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