2SB1560-P Bipolar Transistor

Characteristics of 2SB1560-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 6500 to 20000
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1560-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1560-P transistor can have a current gain of 6500 to 20000. The gain of the 2SB1560 will be in the range from 5000 to 30000, for the 2SB1560-O it will be in the range from 5000 to 12000, for the 2SB1560-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SB1560-P equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1560-P might only be marked "B1560-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1560-P is the 2SD2390-P.

Replacement and Equivalent for 2SB1560-P transistor

You can replace the 2SB1560-P with the BDV66D.
If you find an error please send an email to mail@el-component.com