BDT32A Bipolar Transistor

Characteristics of BDT32A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT32A

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT32A is the BDT31A.

Replacement and Equivalent for BDT32A transistor

You can replace the BDT32A with the BDT32B, BDT32C, D44C10, D44C7, D45C10, D45C7, MJF32C, MJF32CG, TIP32A, TIP32AG, TIP32B, TIP32BG, TIP32C, TIP32CF, TIP32CG, TIP32D or TIP32E.
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