BDT32C Bipolar Transistor

Characteristics of BDT32C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT32C

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT32C is the BDT31C.

Replacement and Equivalent for BDT32C transistor

You can replace the BDT32C with the MJF32C, MJF32CG, TIP32C, TIP32CF, TIP32CG, TIP32D, TIP32E or TIP32F.
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