BDT31A Bipolar Transistor

Characteristics of BDT31A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT31A

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT31A is the BDT32A.

Replacement and Equivalent for BDT31A transistor

You can replace the BDT31A with the BDT31B, BDT31C, MJF31C, MJF31CG, TIP31A, TIP31AG, TIP31B, TIP31BG, TIP31C, TIP31CF, TIP31CG, TIP31D or TIP31E.
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