BDT31A Bipolar Transistor
Characteristics of BDT31A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 3 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 10 to 50
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDT31A
Complementary PNP transistor
Replacement and Equivalent for BDT31A transistor
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