BDT32B Bipolar Transistor
Characteristics of BDT32B Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -120 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 10 to 50
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDT32B
Complementary NPN transistor
Replacement and Equivalent for BDT32B transistor
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