BDT32B Bipolar Transistor

Characteristics of BDT32B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT32B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT32B is the BDT31B.

Replacement and Equivalent for BDT32B transistor

You can replace the BDT32B with the BDT32C, D44C10, D45C10, MJF32C, MJF32CG, TIP32B, TIP32BG, TIP32C, TIP32CF, TIP32CG, TIP32D, TIP32E or TIP32F.
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