TIP32E Bipolar Transistor

Characteristics of TIP32E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of TIP32E

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the TIP32E is the TIP31E.

Replacement and Equivalent for TIP32E transistor

You can replace the TIP32E with the TIP32D or TIP32F.
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