TIP31E Bipolar Transistor

Characteristics of TIP31E Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of TIP31E

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the TIP31E is the TIP32E.

Replacement and Equivalent for TIP31E transistor

You can replace the TIP31E with the TIP31D or TIP31F.
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