BDT31B Bipolar Transistor

Characteristics of BDT31B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT31B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT31B is the BDT32B.

Replacement and Equivalent for BDT31B transistor

You can replace the BDT31B with the BDT31C, MJF31C, MJF31CG, TIP31B, TIP31BG, TIP31C, TIP31CF, TIP31CG, TIP31D, TIP31E or TIP31F.
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