BDT31C Bipolar Transistor

Characteristics of BDT31C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 140 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT31C

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT31C is the BDT32C.

Replacement and Equivalent for BDT31C transistor

You can replace the BDT31C with the MJF31C, MJF31CG, TIP31C, TIP31CF, TIP31CG, TIP31D, TIP31E or TIP31F.
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