BDT30AF Bipolar Transistor
Characteristics of BDT30AF Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 19 W
- DC Current Gain (hfe): 15 to 75
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220F
- Electrically Similar to the Popular BDT30A transistor
Pinout of BDT30AF
Complementary NPN transistor
Replacement and Equivalent for BDT30AF transistor
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