BDT30AF Bipolar Transistor

Characteristics of BDT30AF Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 19 W
  • DC Current Gain (hfe): 15 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular BDT30A transistor

Pinout of BDT30AF

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT30AF is the BDT29AF.

Replacement and Equivalent for BDT30AF transistor

You can replace the BDT30AF with the 2N6475, 2N6476, BD708, BD710, BD712, BD908, BD910, BD912, BDT30BF, BDT30CF, BDT42A, BDT42AF, BDT42B, BDT42BF, BDT42C, BDT42CF, D44C10, D44C7, D45C10, D45C7, MJE5170, TIP30A, TIP30AG, TIP30B, TIP30BG, TIP30C, TIP30CG, TIP42A, TIP42AG, TIP42B, TIP42BG, TIP42C, TIP42CF or TIP42CG.
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