BDT29AF Bipolar Transistor

Characteristics of BDT29AF Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 19 W
  • DC Current Gain (hfe): 15 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular BDT29A transistor

Pinout of BDT29AF

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT29AF is the BDT30AF.

Replacement and Equivalent for BDT29AF transistor

You can replace the BDT29AF with the 2N6473, 2N6474, 2SD1274, 2SD1274A, 2SD1274B, BD707, BD709, BD711, BD907, BD909, BD911, BDT29BF, BDT29CF, BDT41A, BDT41AF, BDT41B, BDT41BF, BDT41C, BDT41CF, MJE5180, TIP29A, TIP29AG, TIP29B, TIP29BG, TIP29C, TIP29CG, TIP41A, TIP41AG, TIP41B, TIP41BG, TIP41C, TIP41CF, TIP41CG, TIP41D or TIP42D.
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