BDT30CF Bipolar Transistor

Characteristics of BDT30CF Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 19 W
  • DC Current Gain (hfe): 15 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular BDT30C transistor

Pinout of BDT30CF

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT30CF is the BDT29CF.

Replacement and Equivalent for BDT30CF transistor

You can replace the BDT30CF with the 2N6475, 2N6476, BD712, BD912, BDT42C, BDT42CF, MJE5170, MJE5171, MJE5172, NTE292, TIP30C, TIP30CG, TIP42C, TIP42CF or TIP42CG.
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