BDT30BF Bipolar Transistor

Characteristics of BDT30BF Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 19 W
  • DC Current Gain (hfe): 15 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular BDT30B transistor

Pinout of BDT30BF

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT30BF is the BDT29BF.

Replacement and Equivalent for BDT30BF transistor

You can replace the BDT30BF with the 2N6475, 2N6476, BD710, BD712, BD910, BD912, BDT30CF, BDT42B, BDT42BF, BDT42C, BDT42CF, D44C10, D45C10, MJE5170, MJE5171, MJE5172, NTE292, TIP30B, TIP30BG, TIP30C, TIP30CG, TIP42B, TIP42BG, TIP42C, TIP42CF or TIP42CG.
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