BD135-6 Bipolar Transistor

Characteristics of BD135-6 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 45 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 40 to 100
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD135-6

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD135-6 transistor can have a current gain of 40 to 100. The gain of the BD135 will be in the range from 40 to 250, for the BD135-10 it will be in the range from 63 to 160, for the BD135-16 it will be in the range from 100 to 250.

Complementary PNP transistor

The complementary PNP transistor to the BD135-6 is the BD136-6.

SMD Version of BD135-6 transistor

The BCP54 (SOT-223) is the SMD version of the BD135-6 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD135-6 transistor

You can replace the BD135-6 with the 2N4922, 2N4922G, 2N4923, 2N4923G, 2N5191, 2N5191G, BD131, BD135G, BD137, BD137-6, BD137G, BD139, BD139-6, BD139G, BD165, BD167, BD169, BD175, BD177, BD179, BD187, BD189, BD226, BD228, BD230, BD233, BD233G, BD235, BD235G, BD237, BD237G, BD375, BD375-6, BD377, BD377-6, BD379, BD379-6, BD437, BD437G, BD439, BD439G, BD441, BD441G, BD785, BD787, BD787G, BD789, MJE223, MJE224, MJE225, MJE240, MJE241, MJE242, MJE721 or MJE722.
If you find an error please send an email to mail@el-component.com