BD135G Bipolar Transistor
Characteristics of BD135G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 45 V
- Collector-Base Voltage, max: 45 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1.5 A
- Collector Dissipation: 12.5 W
- DC Current Gain (hfe): 40 to 250
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- The BD135G is the lead-free version of the BD135 transistor
Pinout of BD135G
Complementary PNP transistor
SMD Version of BD135G transistor
Replacement and Equivalent for BD135G transistor
If you find an error please send an email to mail@el-component.com