2SA1312 Bipolar Transistor

Characteristics of 2SA1312 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 200 to 700
  • Transition Frequency, min: 100 MHz
  • Noise Figure, max: 0.5 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SA1312

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1312 transistor can have a current gain of 200 to 700. The gain of the 2SA1312-BL will be in the range from 350 to 700, for the 2SA1312-GR it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1312 might only be marked "A1312".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1312 is the 2SC3324.

Replacement and Equivalent for 2SA1312 transistor

You can replace the 2SA1312 with the 2SA1163, KST93 or PBHV9115T.
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