BC856C Bipolar Transistor

Characteristics of BC856C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC856C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC856C transistor can have a current gain of 420 to 800. The gain of the BC856 will be in the range from 110 to 800, for the BC856A it will be in the range from 110 to 220, for the BC856B it will be in the range from 200 to 450.

Complementary NPN transistor

The complementary NPN transistor to the BC856C is the BC846C.

Replacement and Equivalent for BC856C transistor

You can replace the BC856C with the FMMTA56, KST56, MMBTA56, PMBTA56 or SMBTA56.
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